new releases
Wenteq Microwave Corporation Announces the Release of the ABP0300-01-3333 Broadband GaAs Power Amplifier
Monrovia, CA – July 30, 2026– Wenteq Microwave Corporation is pleased to announce the launch of the new ABP0300-01-3333 Broadband GaAs RF Power Amplifier, a high-performance RF amplifier engineered for broadband applications requiring wide frequency coverage, high gain, and reliable output power.
The model ABP0300-01-3330 operates from 30 MHz to 3 GHz, and provides +33dBm of output P-1dB power and 33 dB of small-signal gain in a compact and robust design. Utilizing state of the art Gallium GaAs (GaAs) technology, the amplifier offers excellent gai
Wenteq Microwave Corporation Announces the Release of the ABP0300-01-4040 Broadband GaN Power Amplifier
Monrovia, CA – June 2, 2026– Wenteq Microwave Corporation is excited to announce the launch of the ABP0300-01-4040 Broadband GaN RF Power Amplifier, a high-performance RF amplifier engineered for broadband applications requiring wide frequency coverage, high gain, and reliable output power.
The ABP0300-01-4040 delivers continuous broadband operation from 30 MHz to 3 GHz, providing +40 dBm (10 Watts) saturated output power and 40 dB small-signal gain in a compact and robust design. Utilizing advanced Gallium Nitride (GaN) technology, the amplifier offers excellent power density, efficiency, and thermal performance, making it an ideal solution for modern RF and microwave systems.
The ABP0300-01-4040 Broadband GaN RF Power Amplifier is available immediately for evaluation and production orders. Engineering support and customization services are also available to meet specific customer requirements.
For product information, pricing, and technical support, please contact us at sales@wenteq.com.